AUIRF7103QTR Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 2N-CH 50V 3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 65312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 396+ | 1.2 EUR |
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Technische Details AUIRF7103QTR Infineon Technologies
Description: INFINEON - AUIRF7103QTR - Dual-MOSFET, n-Kanal, 50 V, 3 A, 0.13 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: -V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 3A, Drain-Source-Durchgangswiderstand, p-Kanal: -ohm, Verlustleistung, p-Kanal: -W, Drain-Source-Spannung Vds, n-Kanal: 50V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pins, Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.13ohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2.4W, Betriebstemperatur, max.: 175°C.
Weitere Produktangebote AUIRF7103QTR nach Preis ab 0.96 EUR bis 1.84 EUR
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AUIRF7103QTR | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 50V 3A Automotive AEC-Q101 8-Pin SOIC T/R |
auf Bestellung 3909 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7103QTR | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 50V 3A Automotive AEC-Q101 8-Pin SOIC T/R |
auf Bestellung 1777 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7103QTR | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 50V 3A Automotive AEC-Q101 8-Pin SOIC T/R |
auf Bestellung 1424 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7103QTR | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 50V 3A Automotive AEC-Q101 8-Pin SOIC T/R |
auf Bestellung 1424 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7103QTR | Hersteller : INFINEON |
Description: INFINEON - AUIRF7103QTR - Dual-MOSFET, n-Kanal, 50 V, 3 A, 0.13 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: -A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: -V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: -ohm Verlustleistung, p-Kanal: -W Drain-Source-Spannung Vds, n-Kanal: 50V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.13ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.4W Betriebstemperatur, max.: 175°C |
auf Bestellung 22090 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7103QTR | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 50V 3A Automotive 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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AUIRF7103QTR | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 50V Drain current: 3A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10nC Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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AUIRF7103QTR | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 50V 3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AUIRF7103QTR | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 50V 3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AUIRF7103QTR | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 50V Drain current: 3A Power dissipation: 2.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 10nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |