AUIRF3805S-7P Infineon Technologies
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.75 EUR |
10+ | 9.66 EUR |
3000+ | 8.18 EUR |
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Technische Details AUIRF3805S-7P Infineon Technologies
Description: MOSFET N-CH 55V 160A D2PAK, Packaging: Tube, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK (7-Lead), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V.
Weitere Produktangebote AUIRF3805S-7P
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AUIRF3805S-7P | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 55V 240A Automotive 7-Pin(6+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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AUIRF3805S-7P | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 240A Power dissipation: 300W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 130nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AUIRF3805S-7P | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 55V 240A Automotive 7-Pin(6+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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AUIRF3805S-7P | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 160A D2PAK Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V |
Produkt ist nicht verfügbar |
||
AUIRF3805S-7P | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 240A Power dissipation: 300W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 130nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |