AUIRF3805L-7P INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; TO263CA-7
Mounting: THT
Case: TO263CA-7
Power dissipation: 300W
Technology: HEXFET®
Drain-source voltage: 55V
Drain current: 240A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 130nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; TO263CA-7
Mounting: THT
Case: TO263CA-7
Power dissipation: 300W
Technology: HEXFET®
Drain-source voltage: 55V
Drain current: 240A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 130nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 83 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.83 EUR |
28+ | 2.6 EUR |
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Produktbewertung abgeben
Technische Details AUIRF3805L-7P INFINEON TECHNOLOGIES
Description: MOSFET N-CH 55V 160A TO262, Packaging: Tube, Package / Case: TO-262-7, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V.
Weitere Produktangebote AUIRF3805L-7P nach Preis ab 2.6 EUR bis 2.83 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
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AUIRF3805L-7P | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; TO263CA-7 Mounting: THT Case: TO263CA-7 Power dissipation: 300W Technology: HEXFET® Drain-source voltage: 55V Drain current: 240A On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 130nC Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF3805L-7P | Hersteller : Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 2.6mOhms |
auf Bestellung 193 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF3805L-7P | Hersteller : Infineon Technologies | Trans MOSFET N-CH Si 55V 240A Automotive Tube |
Produkt ist nicht verfügbar |
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AUIRF3805L-7P | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 160A TO262 Packaging: Tube Package / Case: TO-262-7 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V |
Produkt ist nicht verfügbar |