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AS3PK-M3/86A Vishay General Semiconductor - Diodes Division
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Description: DIODE AVALANCHE 800V 2.1A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Avalanche
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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Technische Details AS3PK-M3/86A Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2.1A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.2 µs, Technology: Avalanche, Capacitance @ Vr, F: 37pF @ 4V, 1MHz, Current - Average Rectified (Io): 2.1A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
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AS3PK-M3/86A | Hersteller : Vishay General Semiconductor |
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