APTM50HM75SCTG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 500V; 34A; SP4; Idm: 184A; 357W; screw, Pulsed drain current: 184A, Power dissipation: 357W, Technology: POWER MOS 7®; SiC, Drain current: 34A, Drain-source voltage: 500V, Mechanical mounting: screw, Electrical mounting: FASTON connectors; screw, Gate-source voltage: ±30V, Type of module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Case: SP4, On-state resistance: 90mΩ, Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor, Anzahl je Verpackung: 1 Stücke.