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APTGV50H60T3G Microchip Technology
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Technische Details APTGV50H60T3G Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: NPT, Trench Field Stop, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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APTGV50H60T3G | Hersteller : Microsemi Corporation |
Description: IGBT MODULE 600V 80A 176W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT, Trench Field Stop Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
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