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APTGT50H170TG

APTGT50H170TG Microchip Technology


11007904-aptgt50h170tg-rev1-pdf.pdf Hersteller: Microchip Technology
Trans IGBT Module N-CH 1700V 75A 312000mW 20-Pin Case SP-4 Tube
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Technische Details APTGT50H170TG Microchip Technology

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor, Electrical mounting: FASTON connectors; soldering, Mechanical mounting: screw, Application: motors, Type of module: IGBT, Technology: Field Stop; Trench, Topology: H-bridge; NTC thermistor, Case: SP4, Max. off-state voltage: 1.7kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 50A, Pulsed collector current: 100A, Anzahl je Verpackung: 6 Stücke.

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APTGT50H170TG Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=7904 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Application: motors
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge; NTC thermistor
Case: SP4
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Anzahl je Verpackung: 6 Stücke
Produkt ist nicht verfügbar
APTGT50H170TG Hersteller : Microchip Technology index.php?option=com_docman&task=doc_download&gid=7904 Description: IGBT MODULE 1700V 75A 312W SP4
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APTGT50H170TG Hersteller : Microchip / Microsemi index.php?option=com_docman&task=doc_download&gid=7904 IGBT Modules DOR CC4095
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APTGT50H170TG Hersteller : MICROCHIP (MICROSEMI) index.php?option=com_docman&task=doc_download&gid=7904 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Electrical mounting: FASTON connectors; soldering
Mechanical mounting: screw
Application: motors
Type of module: IGBT
Technology: Field Stop; Trench
Topology: H-bridge; NTC thermistor
Case: SP4
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Produkt ist nicht verfügbar