auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 95.2 EUR |
| 25+ | 91.22 EUR |
| 100+ | 88.84 EUR |
| 250+ | 82.51 EUR |
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Technische Details APTGT30H60T1G Microchip Technology
Description: IGBT MODULE 600V 50A 90W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 90 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V.
Weitere Produktangebote APTGT30H60T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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APTGT30H60T1G | Hersteller : Microchip Technology |
 Trans IGBT Module N-CH 600V 50A 90000mW 12-Pin Case SP-1 Tube |
Produkt ist nicht verfügbar |
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| APTGT30H60T1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 30A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 18 Stücke |
Produkt ist nicht verfügbar |
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| APTGT30H60T1G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 50A 90W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 90 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT30H60T1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 30A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |