APTGT300H60G MICROCHIP (MICROSEMI)
![7825-aptgt300h60g-datasheet](/images/adobe-acrobat.png)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; SP6C
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 0.6kV
Collector current: 300A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 4 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTGT300H60G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 600V 430A 1150W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 430 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 1150 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 24 nF @ 25 V.
Weitere Produktangebote APTGT300H60G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
APTGT300H60G | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 300A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 430 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1150 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 24 nF @ 25 V |
Produkt ist nicht verfügbar |
||
APTGT300H60G | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
||
APTGT300H60G | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; SP6C Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 0.6kV Collector current: 300A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 500A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |