![APTGT20H60T3G APTGT20H60T3G](https://download.siliconexpert.com/pdfs/2009/9/6/7/59/27/60/mcs_/manual/aptgt75tl60t3g.jpg)
APTGT20H60T3G Microchip Technology
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTGT20H60T3G Microchip Technology
Description: IGBT MODULE 600V 32A 62W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Part Status: Obsolete, Current - Collector (Ic) (Max): 32 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 62 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V.
Weitere Produktangebote APTGT20H60T3G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
APTGT20H60T3G | Hersteller : Microsemi Corporation |
![]() Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Part Status: Obsolete Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 62 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V |
Produkt ist nicht verfügbar |