auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 439.91 EUR |
10+ | 439.89 EUR |
25+ | 364.48 EUR |
100+ | 355.71 EUR |
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Technische Details APTGT200TL60G Microchip Technology
Description: IGBT MODULE 600V 300A 652W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 652 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V.
Weitere Produktangebote APTGT200TL60G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTGT200TL60G | Hersteller : Microchip Technology | Trans IGBT Module N-CH 600V 300A 652000mW 12-Pin Case SP-6 Tube |
Produkt ist nicht verfügbar |
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APTGT200TL60G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 200A; SP6C; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Collector current: 200A Case: SP6C Application: photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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APTGT200TL60G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 300A 652W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 652 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGT200TL60G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 200A; SP6C; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Collector current: 200A Case: SP6C Application: photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |