![APTGT200DU60TG APTGT200DU60TG](https://download.siliconexpert.com/pdfs/2011/1/20/1/27/36/516/mcs_/manual/casesp4.jpg)
APTGT200DU60TG Microchip Technology
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTGT200DU60TG Microchip Technology
Description: IGBT MODULE 600V 290A 625W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 290 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 625 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V.
Weitere Produktangebote APTGT200DU60TG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
APTGT200DU60TG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Case: SP4 Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
|
APTGT200DU60TG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 625 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V |
Produkt ist nicht verfügbar |
|
APTGT200DU60TG | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
||
APTGT200DU60TG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Case: SP4 Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x2; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
Produkt ist nicht verfügbar |