APTGT200A120G Microchip Technology
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Description: IGBT MODULE 1200V 280A 890W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 890 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 401.74 EUR |
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Technische Details APTGT200A120G Microchip Technology
Description: IGBT MODULE 1200V 280A 890W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 280 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 890 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
Weitere Produktangebote APTGT200A120G nach Preis ab 300.64 EUR bis 404.69 EUR
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APTGT200A120G | Hersteller : Microchip Technology |
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auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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APTGT200A120G | Hersteller : Microchip Technology |
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APTGT200A120G | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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APTGT200A120G | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |