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APTGT150TDU60PG Microchip Technology
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Technische Details APTGT150TDU60PG Microchip Technology
Description: IGBT MODULE 600V 225A 480W SP6P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Triple, Dual - Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: SP6-P, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 225 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 480 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V.
Weitere Produktangebote APTGT150TDU60PG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTGT150TDU60PG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP6P Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x6 Max. off-state voltage: 0.6kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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APTGT150TDU60PG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 480 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGT150TDU60PG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTGT150TDU60PG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x6 Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP6P Type of module: IGBT Technology: Field Stop; Trench Topology: IGBT x6 Max. off-state voltage: 0.6kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 350A |
Produkt ist nicht verfügbar |