APTGT150DH170G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Case: SP6C
Type of module: IGBT
Technology: Field Stop; Trench
Topology: asymmetrical bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTGT150DH170G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV, Mechanical mounting: screw, Electrical mounting: FASTON connectors; screw, Case: SP6C, Type of module: IGBT, Technology: Field Stop; Trench, Topology: asymmetrical bridge, Max. off-state voltage: 1.7kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 300A, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote APTGT150DH170G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGT150DH170G | Hersteller : Microsemi Power Products Group |
Description: IGBT MOD TRENCH ASYM BRIDGE SP6 |
Produkt ist nicht verfügbar |
||
| APTGT150DH170G | Hersteller : Microsemi |
IGBT Modules Power Module - IGBT |
Produkt ist nicht verfügbar |
||
| APTGT150DH170G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 1.7kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: SP6C Type of module: IGBT Technology: Field Stop; Trench Topology: asymmetrical bridge Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
Produkt ist nicht verfügbar |