auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 268.82 EUR |
100+ | 199.71 EUR |
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Technische Details APTGT100DU170TG Microchip Technology
Description: IGBT MODULE 1700V 150A 560W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 560 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.
Weitere Produktangebote APTGT100DU170TG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTGT100DU170TG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTGT100DU170TG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT x2; NTC thermistor Collector current: 100A Anzahl je Verpackung: 8 Stücke |
Produkt ist nicht verfügbar |
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APTGT100DU170TG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 560 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
Produkt ist nicht verfügbar |
|
APTGT100DU170TG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Pulsed collector current: 200A Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; soldering Mechanical mounting: screw Case: SP4 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT x2; NTC thermistor Collector current: 100A |
Produkt ist nicht verfügbar |