APTGLQ100H65T3G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 270A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 100A
Anzahl je Verpackung: 11 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Application: motors
Pulsed collector current: 270A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Case: SP3F
Type of module: IGBT
Technology: Field Stop; Trench
Gate-emitter voltage: ±20V
Topology: H-bridge; NTC thermistor
Collector current: 100A
Anzahl je Verpackung: 11 Stücke
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Technische Details APTGLQ100H65T3G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 650V 135A 350W SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP3F, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 135 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V.
Weitere Produktangebote APTGLQ100H65T3G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTGLQ100H65T3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 650V 135A 350W SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP3F IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 135 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 350 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGLQ100H65T3G | Hersteller : Microsemi | IGBT Modules |
Produkt ist nicht verfügbar |
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APTGLQ100H65T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Application: motors Pulsed collector current: 270A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3F Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: H-bridge; NTC thermistor Collector current: 100A |
Produkt ist nicht verfügbar |