APTGLQ100A65T1G Microchip Technology
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Technische Details APTGLQ100A65T1G Microchip Technology
Description: IGBT MODULE 650V 200A 350W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Through Hole, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 6 nF @ 25 V.
Weitere Produktangebote APTGLQ100A65T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTGLQ100A65T1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Application: motors Pulsed collector current: 270A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT half-bridge; NTC thermistor Collector current: 100A Anzahl je Verpackung: 15 Stücke |
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APTGLQ100A65T1G | Hersteller : Microchip Technology |
Description: IGBT MODULE 650V 200A 350W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 350 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 6 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGLQ100A65T1G | Hersteller : Microchip Technology |
 IGBT Modules CC8101 |
Produkt ist nicht verfügbar |
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| APTGLQ100A65T1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Application: motors Pulsed collector current: 270A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Type of module: IGBT Technology: Field Stop; Trench Gate-emitter voltage: ±20V Topology: IGBT half-bridge; NTC thermistor Collector current: 100A |
Produkt ist nicht verfügbar |