APTGL60DDA120T3G Microchip Technology
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Technische Details APTGL60DDA120T3G Microchip Technology
Description: IGBT MODULE 1200V 80A 280W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual Boost Chopper, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 280 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V.
Weitere Produktangebote APTGL60DDA120T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTGL60DDA120T3G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor Case: SP3 Topology: boost chopper x2; NTC thermistor Technology: Field Stop; Trench Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 100A Power dissipation: 280W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTGL60DDA120T3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1200V 80A 280W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Boost Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 280 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGL60DDA120T3G | Hersteller : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP3F |
Produkt ist nicht verfügbar |
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| APTGL60DDA120T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor Case: SP3 Topology: boost chopper x2; NTC thermistor Technology: Field Stop; Trench Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 100A Power dissipation: 280W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor |
Produkt ist nicht verfügbar |