APTGF50H60T2G Microchip Technology
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTGF50H60T2G Microchip Technology
Description: IGBT MODULE 600V 65A 250W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: NPT, Part Status: Obsolete, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V.
Weitere Produktangebote APTGF50H60T2G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
|
APTGF50H60T2G | Hersteller : Microsemi Corporation |
![]() Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V |
Produkt ist nicht verfügbar |