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APTGF25H120T1G Microchip Technology

Hersteller: Microchip Technology
Trans IGBT Module N-CH 1200V 40A 208mW 12-Pin Case SP-1

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Technische Details APTGF25H120T1G Microchip Technology

Description: IGBT MODULE 1200V 40A 208W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: NPT, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V.

Weitere Produktangebote APTGF25H120T1G

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	APTGF25H120T1G	Hersteller : MICROSEMI	SP1/Full - Bridge NPT IGBT Power Module APTGF25H120 Anzahl je Verpackung: 1 Stücke	Produkt ist nicht verfügbar
	APTGF25H120T1G	Hersteller : Microchip Technology	Description: IGBT MODULE 1200V 40A 208W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: NPT Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 208 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V	Produkt ist nicht verfügbar