APTCV60HM70RT3G Microchip Technology
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Technische Details APTCV60HM70RT3G Microchip Technology
Description: IGBT MODULE 600V 50A 250W SP3, Packaging: Tray, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Single Phase Bridge Rectifier, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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APTCV60HM70RT3G | Hersteller : Microsemi Corporation |
Description: IGBT MODULE 600V 50A 250W SP3 Packaging: Tray Package / Case: SP3 Mounting Type: Chassis Mount Input: Single Phase Bridge Rectifier Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
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