APTC90H12T2G Microchip Technology

Description: MOSFET 4N-CH 900V 30A SP2, Packaging: Tray, Package / Case: SP2, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250W, Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 30A, Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V, Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V, Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V, FET Feature: Super Junction, Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: SP2.