APTC60TAM21SCTPAG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP6P
Drain current: 87A
On-state resistance: 21mΩ
Power dissipation: 625W
Semiconductor structure: SiC diode/transistor
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Topology: MOSFET x3 half-bridge; NTC thermistor
Drain-source voltage: 600V
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APTC60TAM21SCTPAG MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Case: SP6P, Drain current: 87A, On-state resistance: 21mΩ, Power dissipation: 625W, Semiconductor structure: SiC diode/transistor, Type of module: MOSFET transistor, Technology: CoolMOS™; SiC, Gate-source voltage: ±20V, Topology: MOSFET x3 half-bridge; NTC thermistor, Drain-source voltage: 600V, Pulsed drain current: 400A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC60TAM21SCTPAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTC60TAM21SCTPAG | Hersteller : Microsemi Power Products Group |
Description: MOSFET 6N-CH 600V 116A SP6-P |
Produkt ist nicht verfügbar |
||
| APTC60TAM21SCTPAG | Hersteller : Microchip / Microsemi |
Discrete Semiconductor Modules DOR CC6537 |
Produkt ist nicht verfügbar |
||
 |
APTC60TAM21SCTPAG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP6P |
Produkt ist nicht verfügbar |
|
| APTC60TAM21SCTPAG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP6P Drain current: 87A On-state resistance: 21mΩ Power dissipation: 625W Semiconductor structure: SiC diode/transistor Type of module: MOSFET transistor Technology: CoolMOS™; SiC Gate-source voltage: ±20V Topology: MOSFET x3 half-bridge; NTC thermistor Drain-source voltage: 600V Pulsed drain current: 400A |
Produkt ist nicht verfügbar |