APTC60HM45SCTG Microchip Technology
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Technische Details APTC60HM45SCTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw, Type of module: MOSFET transistor, Case: SP4, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 600V, Drain current: 38A, On-state resistance: 45mΩ, Power dissipation: 250W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: CoolMOS™; SiC; SJ-MOSFET, Gate-source voltage: ±20V, Topology: H-bridge; NTC thermistor, Pulsed drain current: 130A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC60HM45SCTG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTC60HM45SCTG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw Type of module: MOSFET transistor Case: SP4 Semiconductor structure: SiC diode/transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±20V Topology: H-bridge; NTC thermistor Pulsed drain current: 130A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTC60HM45SCTG | Hersteller : Microsemi Power Products Group | Description: MOSFET 4N-CH 600V 49A SP4 |
Produkt ist nicht verfügbar |
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APTC60HM45SCTG | Hersteller : Microchip Technology | Discrete Semiconductor Modules DOR CC4133 |
Produkt ist nicht verfügbar |
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APTC60HM45SCTG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw Type of module: MOSFET transistor Case: SP4 Semiconductor structure: SiC diode/transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±20V Topology: H-bridge; NTC thermistor Pulsed drain current: 130A |
Produkt ist nicht verfügbar |