APTC60DHM24T3G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: asymmetrical bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
Case: SP3F
Topology: asymmetrical bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 24mΩ
Pulsed drain current: 260A
Power dissipation: 462W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details APTC60DHM24T3G MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A, Type of module: MOSFET transistor, Semiconductor structure: diode/transistor, Drain-source voltage: 600V, Drain current: 70A, Case: SP3F, Topology: asymmetrical bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 24mΩ, Pulsed drain current: 260A, Power dissipation: 462W, Technology: SJ-MOSFET, Gate-source voltage: ±20V, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
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APTC60DHM24T3G | Hersteller : Microsemi Power Products Group | Description: MOSFET 2N-CH 600V 95A SP3 |
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APTC60DHM24T3G | Hersteller : Microsemi | Discrete Semiconductor Modules Power Module - Coolmos |
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APTC60DHM24T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A Case: SP3F Topology: asymmetrical bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 24mΩ Pulsed drain current: 260A Power dissipation: 462W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
Produkt ist nicht verfügbar |