APTC60AM24T1G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP1; Ugs: ±20V; Idm: 260A
Case: SP1
Power dissipation: 462W
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Technology: CoolMOS™
Pulsed drain current: 260A
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 70A; SP1; Ugs: ±20V; Idm: 260A
Case: SP1
Power dissipation: 462W
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Technology: CoolMOS™
Pulsed drain current: 260A
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
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Technische Details APTC60AM24T1G MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 70A; SP1; Ugs: ±20V; Idm: 260A, Case: SP1, Power dissipation: 462W, Semiconductor structure: transistor/transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Topology: MOSFET half-bridge; NTC thermistor, Technology: CoolMOS™, Pulsed drain current: 260A, Gate-source voltage: ±20V, Type of module: MOSFET transistor, Drain-source voltage: 600V, Drain current: 70A, On-state resistance: 24mΩ.
Weitere Produktangebote APTC60AM24T1G
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Verfügbarkeit |
Preis ohne MwSt |
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APTC60AM24T1G | Hersteller : MICROSEMI |
SP1/POWER MODULE - COOLMOS APTC60AM24 Anzahl je Verpackung: 1 Stücke |
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APTC60AM24T1G | Hersteller : Microsemi Power Products Group | Description: MOSFET 2N-CH 600V 95A SP1 |
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APTC60AM24T1G | Hersteller : Microsemi | Discrete Semiconductor Modules Power Module - Coolmos |
Produkt ist nicht verfügbar |
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APTC60AM24T1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 70A; SP1; Ugs: ±20V; Idm: 260A Case: SP1 Power dissipation: 462W Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: MOSFET half-bridge; NTC thermistor Technology: CoolMOS™ Pulsed drain current: 260A Gate-source voltage: ±20V Type of module: MOSFET transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ |
Produkt ist nicht verfügbar |