![APT80GA90S APT80GA90S](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/5644/150%7ED3PAK%7E%7E2.jpg)
APT80GA90S Microchip Technology
![123651-apt80ga90b-apt80ga90s-datasheet](/images/adobe-acrobat.png)
Description: IGBT PT 900V 145A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: D3Pak
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/149ns
Switching Energy: 1.625mJ (on), 1.389mJ (off)
Test Condition: 600V, 47A, 4.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 239 A
Power - Max: 625 W
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.59 EUR |
100+ | 16.9 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT80GA90S Microchip Technology
Description: IGBT PT 900V 145A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A, Supplier Device Package: D3Pak, IGBT Type: PT, Td (on/off) @ 25°C: 18ns/149ns, Switching Energy: 1.625mJ (on), 1.389mJ (off), Test Condition: 600V, 47A, 4.7Ohm, 15V, Gate Charge: 200 nC, Part Status: Active, Current - Collector (Ic) (Max): 145 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 239 A, Power - Max: 625 W.
Weitere Produktangebote APT80GA90S
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
APT80GA90S | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
APT80GA90S | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; PT; 900V; 80A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Kind of package: tube Gate charge: 200nC Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Gate-emitter voltage: ±30V Collector current: 80A Pulsed collector current: 239A Turn-on time: 49ns Turn-off time: 320ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
![]() |
APT80GA90S | Hersteller : Microchip / Microsemi |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
APT80GA90S | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
APT80GA90S | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; PT; 900V; 80A; 625W; D3PAK Mounting: SMD Case: D3PAK Power dissipation: 625W Kind of package: tube Gate charge: 200nC Technology: POWER MOS 8®; PT Collector-emitter voltage: 900V Gate-emitter voltage: ±30V Collector current: 80A Pulsed collector current: 239A Turn-on time: 49ns Turn-off time: 320ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |