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APT8065SVRG Microchip Technology
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 23.06 EUR |
500+ | 19.91 EUR |
1000+ | 19.45 EUR |
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Technische Details APT8065SVRG Microchip Technology
Description: MOSFET N-CH 800V 13A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D3Pak, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V.
Weitere Produktangebote APT8065SVRG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT8065SVRG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT8065SVRG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Drain-source voltage: 800V Drain current: 13A On-state resistance: 0.65Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Mounting: SMD Case: D3PAK Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT8065SVRG | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D3Pak Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
Produkt ist nicht verfügbar |
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![]() |
APT8065SVRG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Drain-source voltage: 800V Drain current: 13A On-state resistance: 0.65Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Mounting: SMD Case: D3PAK |
Produkt ist nicht verfügbar |