APT8056BVRG Microchip Technology
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 25.91 EUR |
| 100+ | 25.89 EUR |
| 500+ | 22.37 EUR |
| 1000+ | 21.86 EUR |
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Technische Details APT8056BVRG Microchip Technology
Description: MOSFET N-CH 800V 16A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247 [B], Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V.
Weitere Produktangebote APT8056BVRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT8056BVRG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT8056BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A Mounting: THT Power dissipation: 370W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.56Ω Drain current: 16A Drain-source voltage: 800V Gate charge: 275nC Case: TO247-3 Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 64A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT8056BVRG | Hersteller : MICROSEMI |
TO247/POWER MOSFET - MOS5 APT8056 Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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APT8056BVRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 800V 16A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT8056BVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A Mounting: THT Power dissipation: 370W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.56Ω Drain current: 16A Drain-source voltage: 800V Gate charge: 275nC Case: TO247-3 Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 64A |
Produkt ist nicht verfügbar |