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APT8052BFLLG Microchip Technology
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Technische Details APT8052BFLLG Microchip Technology
Description: MOSFET N-CH 800V 15A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V.
Weitere Produktangebote APT8052BFLLG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT8052BFLLG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT8052BFLLG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3 Mounting: THT Power dissipation: 298W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.52Ω Drain current: 15A Drain-source voltage: 800V Gate charge: 75nC Case: TO247-3 Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT8052BFLLG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT8052BFLLG | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Part Status: Active Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT8052BFLLG | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
APT8052BFLLG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 15A; Idm: 60A; 298W; TO247-3 Mounting: THT Power dissipation: 298W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 0.52Ω Drain current: 15A Drain-source voltage: 800V Gate charge: 75nC Case: TO247-3 Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 60A |
Produkt ist nicht verfügbar |