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APT75GN60LDQ3G Microchip Technology
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IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 75 A TO-264
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 17.05 EUR |
100+ | 14.75 EUR |
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Technische Details APT75GN60LDQ3G Microchip Technology
Description: IGBT TRENCH FS 600V 155A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A, Supplier Device Package: TO-264 [L], IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 47ns/385ns, Switching Energy: 2500µJ (on), 2140µJ (off), Test Condition: 400V, 75A, 1Ohm, 15V, Gate Charge: 485 nC, Part Status: Active, Current - Collector (Ic) (Max): 155 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 536 W.
Weitere Produktangebote APT75GN60LDQ3G nach Preis ab 16.71 EUR bis 25.71 EUR
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APT75GN60LDQ3G | Hersteller : Microchip Technology |
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auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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APT75GN60LDQ3G | Hersteller : Microchip Technology |
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APT75GN60LDQ3G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT75GN60LDQ3G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT75GN60LDQ3G | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; 600V; 93A; 536W; TO264 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT75GN60LDQ3G | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A Supplier Device Package: TO-264 [L] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 47ns/385ns Switching Energy: 2500µJ (on), 2140µJ (off) Test Condition: 400V, 75A, 1Ohm, 15V Gate Charge: 485 nC Part Status: Active Current - Collector (Ic) (Max): 155 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 536 W |
Produkt ist nicht verfügbar |
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APT75GN60LDQ3G | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; 600V; 93A; 536W; TO264 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |