APT68GA60LD40 Microchip / Microsemi


APT68GA60B2_LD40_F-1592297.pdf Hersteller: Microchip / Microsemi
IGBT Transistors FG, IGBT-COMBI, 600V, TO-264
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Technische Details APT68GA60LD40 Microchip / Microsemi

Category: THT IGBT transistors, Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264, Technology: POWER MOS 8®; PT, Case: TO264, Mounting: THT, Kind of package: tube, Turn-on time: 46ns, Turn-off time: 304ns, Power dissipation: 520W, Collector-emitter voltage: 600V, Collector current: 68A, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 198nC, Gate-emitter voltage: ±30V, Pulsed collector current: 202A, Type of transistor: IGBT, Anzahl je Verpackung: 1 Stücke.

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APT68GA60LD40 APT68GA60LD40 Hersteller : MICROCHIP (MICROSEMI) 123666-apt68ga60b2d40-apt68ga60ld40-datasheet Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264
Technology: POWER MOS 8®; PT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Collector-emitter voltage: 600V
Collector current: 68A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 198nC
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT68GA60LD40 APT68GA60LD40 Hersteller : Microchip Technology apt68ga60b2_ld40_f.pdf Trans IGBT Chip N-CH 600V 121A 520000mW 3-Pin(3+Tab) TO-264 Tube
Produkt ist nicht verfügbar
APT68GA60LD40 APT68GA60LD40 Hersteller : Microchip Technology 123666-apt68ga60b2d40-apt68ga60ld40-datasheet Description: IGBT 600V 121A 520W TO-264
Produkt ist nicht verfügbar
APT68GA60LD40 APT68GA60LD40 Hersteller : MICROCHIP (MICROSEMI) 123666-apt68ga60b2d40-apt68ga60ld40-datasheet Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; TO264
Technology: POWER MOS 8®; PT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Collector-emitter voltage: 600V
Collector current: 68A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 198nC
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Type of transistor: IGBT
Produkt ist nicht verfügbar