APT66M60B2 Microchip / Microsemi
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Technische Details APT66M60B2 Microchip / Microsemi
Description: MOSFET N-CH 600V 70A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V, Power Dissipation (Max): 1135W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V.
Weitere Produktangebote APT66M60B2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT66M60B2 | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 600V 70A 3-Pin(3+Tab) T-MAX Tube |
Produkt ist nicht verfügbar |
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| APT66M60B2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Mounting: THT Case: TO247MAX Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1135W On-state resistance: 90mΩ Drain current: 44A Drain-source voltage: 600V Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT66M60B2 | Hersteller : MICROSEMI |
T-MAX/N-CHANNEL POWER MOSFET - MOS8 APT66M60 Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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APT66M60B2 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 600V 70A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V Power Dissipation (Max): 1135W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT66M60B2 | Hersteller : Microchip Technology |
MOSFET MOSFET MOS8 600 V 66 A TO-247 MAX |
Produkt ist nicht verfügbar |
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| APT66M60B2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Mounting: THT Case: TO247MAX Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1135W On-state resistance: 90mΩ Drain current: 44A Drain-source voltage: 600V Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A |
Produkt ist nicht verfügbar |