APT64GA90LD30 Microsemi Power Products Group
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Technische Details APT64GA90LD30 Microsemi Power Products Group
Category: THT IGBT transistors, Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264, Power dissipation: 500W, Case: TO264, Mounting: THT, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Technology: POWER MOS 8®; PT, Gate-emitter voltage: ±30V, Collector current: 64A, Collector-emitter voltage: 900V, Gate charge: 162nC, Turn-on time: 44ns, Pulsed collector current: 193A, Turn-off time: 352ns, Type of transistor: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT64GA90LD30
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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APT64GA90LD30 | Hersteller : Microchip Technology |
 Trans IGBT Chip N-CH 900V 117A 500W 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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APT64GA90LD30 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264 Power dissipation: 500W Case: TO264 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Gate-emitter voltage: ±30V Collector current: 64A Collector-emitter voltage: 900V Gate charge: 162nC Turn-on time: 44ns Pulsed collector current: 193A Turn-off time: 352ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT64GA90LD30 | Hersteller : Microchip / Microsemi |
IGBT Transistors FG, IGBT-COMBI, 900V, TO-264 |
Produkt ist nicht verfügbar |
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APT64GA90LD30 | Hersteller : Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 900V, TO-264 |
Produkt ist nicht verfügbar |
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APT64GA90LD30 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 64A; 500W; TO264 Power dissipation: 500W Case: TO264 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Gate-emitter voltage: ±30V Collector current: 64A Collector-emitter voltage: 900V Gate charge: 162nC Turn-on time: 44ns Pulsed collector current: 193A Turn-off time: 352ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |