APT60M80L2VRG MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 65A; Idm: 260A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 833W
Case: TO264MAX
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 590nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APT60M80L2VRG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 65A; Idm: 260A, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 65A, Pulsed drain current: 260A, Power dissipation: 833W, Case: TO264MAX, Gate-source voltage: ±30V, On-state resistance: 80mΩ, Mounting: THT, Gate charge: 590nC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT60M80L2VRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
APT60M80L2VRG | Hersteller : Microsemi Power Products Group |
Description: MOSFET N-CH 600V 65A TO-264MAX |
Produkt ist nicht verfügbar |
|
| APT60M80L2VRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 65A; Idm: 260A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Drain current: 65A Pulsed drain current: 260A Power dissipation: 833W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 590nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |