APT60M75L2LLG Microchip Technology
![6447-apt60m75l2llg-datasheet](/images/adobe-acrobat.png)
Description: MOSFET N-CH 600V 73A 264 MAX
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V
Power Dissipation (Max): 893W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: 264 MAX™ [L2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 83.11 EUR |
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Technische Details APT60M75L2LLG Microchip Technology
Description: MOSFET N-CH 600V 73A 264 MAX, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V, Power Dissipation (Max): 893W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: 264 MAX™ [L2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8930 pF @ 25 V.
Weitere Produktangebote APT60M75L2LLG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT60M75L2LLG | Hersteller : Microsemi |
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APT60M75L2LLG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT60M75L2LLG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 73A Pulsed drain current: 292A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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![]() |
APT60M75L2LLG | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
|
APT60M75L2LLG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 73A; Idm: 292A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 73A Pulsed drain current: 292A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: THT Gate charge: 195nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |