![APT6013JLL APT6013JLL](https://download.siliconexpert.com/pdfs/2016/6/10/3/24/19/246/mcs_/manual/apt2x60d60j.jpg)
APT6013JLL Microchip Technology
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details APT6013JLL Microchip Technology
Description: MOSFET N-CH 600V 39A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V.
Weitere Produktangebote APT6013JLL
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
APT6013JLL | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 600V; 39A; ISOTOP; screw; Idm: 156A; 460W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Pulsed drain current: 156A Power dissipation: 460W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.13Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
![]() |
APT6013JLL | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V |
Produkt ist nicht verfügbar |
|
APT6013JLL | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
||
APT6013JLL | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 600V; 39A; ISOTOP; screw; Idm: 156A; 460W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Pulsed drain current: 156A Power dissipation: 460W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.13Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |