APT6011B2VRG Microchip Technology
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Technische Details APT6011B2VRG Microchip Technology
Description: MOSFET N-CH 600V 49A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 24.5A, 10V, Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.
Weitere Produktangebote APT6011B2VRG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT6011B2VRG | Hersteller : MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 49A; Idm: 196A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 450nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT6011B2VRG | Hersteller : MICROSEMI |
TMAX/ [B2]POWER MOSFET - MOS5 APT6011 Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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APT6011B2VRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 600V 49A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT6011B2VRG | Hersteller : Microchip Technology |
MOSFET MOSFET MOS5 600 V 11 Ohm TO-247 MAX |
Produkt ist nicht verfügbar |
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| APT6011B2VRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 600V; 49A; Idm: 196A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 450nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |