APT50GP60LDLG MICROSEMI
Hersteller: MICROSEMITO264/INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI APT50GP60
Anzahl je Verpackung: 1 Stücke
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Technische Details APT50GP60LDLG MICROSEMI
Description: IGBT 600V 150A 625W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A, Supplier Device Package: TO-264, IGBT Type: PT, Td (on/off) @ 25°C: 19ns/85ns, Switching Energy: 456µJ (on), 635µJ (off), Test Condition: 400V, 50A, 4.3Ohm, 15V, Gate Charge: 165 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 190 A, Power - Max: 625 W.
Weitere Produktangebote APT50GP60LDLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APT50GP60LDLG | Hersteller : Microsemi Corporation |
Description: IGBT 600V 150A 625W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: TO-264 IGBT Type: PT Td (on/off) @ 25°C: 19ns/85ns Switching Energy: 456µJ (on), 635µJ (off) Test Condition: 400V, 50A, 4.3Ohm, 15V Gate Charge: 165 nC Part Status: Obsolete Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 190 A Power - Max: 625 W |
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