APT5010B2FLLG Microchip Technology
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Description: MOSFET N-CH 500V 46A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 28.25 EUR |
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Technische Details APT5010B2FLLG Microchip Technology
Description: MOSFET N-CH 500V 46A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 23A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V.
Weitere Produktangebote APT5010B2FLLG nach Preis ab 24.57 EUR bis 28.44 EUR
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APT5010B2FLLG | Hersteller : Microchip Technology |
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auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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APT5010B2FLLG | Hersteller : Microchip Technology |
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APT5010B2FLLG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5010B2FLLG | Hersteller : MICROSEMI |
![]() Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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APT5010B2FLLG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |