APT45GP120JDQ2 Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT MOD 1200V 75A 329W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 750 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 70.91 EUR |
| 100+ | 57.57 EUR |
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Technische Details APT45GP120JDQ2 Microchip Technology
Description: IGBT MOD 1200V 75A 329W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 329 W, Current - Collector Cutoff (Max): 750 µA, Input Capacitance (Cies) @ Vce: 4 nF @ 25 V.
Weitere Produktangebote APT45GP120JDQ2
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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APT45GP120JDQ2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 34A Pulsed collector current: 170A Power dissipation: 329W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7® Anzahl je Verpackung: 1 Stücke |
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APT45GP120JDQ2 | Hersteller : Microchip Technology |
IGBTs IGBT PT MOS 7 Combi 1200 V 45 A SOT-227 |
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APT45GP120JDQ2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 34A; SOT227B Case: SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 34A Pulsed collector current: 170A Power dissipation: 329W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: POWER MOS 7® |
Produkt ist nicht verfügbar |