APT45GP120BG Microchip Technology
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 29.34 EUR |
500+ | 25.36 EUR |
1000+ | 24.78 EUR |
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Technische Details APT45GP120BG Microchip Technology
Description: IGBT PT 1200V 100A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 18ns/102ns, Switching Energy: 900µJ (on), 904µJ (off), Test Condition: 600V, 45A, 5Ohm, 15V, Gate Charge: 185 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 170 A, Power - Max: 625 W.
Weitere Produktangebote APT45GP120BG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT45GP120BG | Hersteller : Microchip Technology | Trans IGBT Chip N-CH 1200V 100A 625mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT45GP120BG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 54A Pulsed collector current: 170A Turn-on time: 47ns Turn-off time: 230ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 185nC Technology: POWER MOS 7®; PT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT45GP120BG | Hersteller : Microchip Technology |
Description: IGBT PT 1200V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 18ns/102ns Switching Energy: 900µJ (on), 904µJ (off) Test Condition: 600V, 45A, 5Ohm, 15V Gate Charge: 185 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 170 A Power - Max: 625 W |
Produkt ist nicht verfügbar |
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APT45GP120BG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 54A; 625W; TO247-3 Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 54A Pulsed collector current: 170A Turn-on time: 47ns Turn-off time: 230ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 185nC Technology: POWER MOS 7®; PT |
Produkt ist nicht verfügbar |