APT40SM120S

APT40SM120S Microsemi Corporation


Hersteller: Microsemi Corporation
Description: SICFET N-CH 1200V 41A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 1000 V
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Technische Details APT40SM120S Microsemi Corporation

Description: SICFET N-CH 1200V 41A D3PAK, Packaging: Bulk, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 273W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA (Typ), Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 1000 V.

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APT40SM120S APT40SM120S Hersteller : Microchip / Microsemi MOSFET Power MOSFET - SiC
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