APT40SM120J

APT40SM120J Microchip / Microsemi


APT40SM120J.pdf Hersteller: Microchip / Microsemi
Discrete Semiconductor Modules Power MOSFET - SiC
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Technische Details APT40SM120J Microchip / Microsemi

Description: MOSFET N-CH 1200V 32A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA (Typ), Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 1000 V.

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APT40SM120J APT40SM120J Hersteller : Microsemi Corporation APT40SM120J.pdf Description: MOSFET N-CH 1200V 32A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 1000 V
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