APT40GR120B2SCD10 MICROSEMI
auf Bestellung 22 Stücke:
Lieferzeit 7-21 Tag (e)
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Technische Details APT40GR120B2SCD10 MICROSEMI
Description: IGBT 1200V 88A 500W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 20ns/166ns, Switching Energy: 929µJ (on), 1070µJ (off), Test Condition: 600V, 40A, 4.3Ohm, 15V, Gate Charge: 210 nC, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 500 W.
Weitere Produktangebote APT40GR120B2SCD10
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT40GR120B2SCD10 | Hersteller : Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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APT40GR120B2SCD10 | Hersteller : Microchip Technology | Trans IGBT Chip N-CH 1200V 88A 500W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT40GR120B2SCD10 | Hersteller : Microsemi Corporation |
Description: IGBT 1200V 88A 500W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 20ns/166ns Switching Energy: 929µJ (on), 1070µJ (off) Test Condition: 600V, 40A, 4.3Ohm, 15V Gate Charge: 210 nC Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
Produkt ist nicht verfügbar |