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APT40GR120B2SCD10 MICROSEMI


Hersteller: MICROSEMI
TO-247-3/Ultra Fast NPT - IGBT APT40GR120
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:

Lieferzeit 7-21 Tag (e)
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Technische Details APT40GR120B2SCD10 MICROSEMI

Description: IGBT 1200V 88A 500W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 20ns/166ns, Switching Energy: 929µJ (on), 1070µJ (off), Test Condition: 600V, 40A, 4.3Ohm, 15V, Gate Charge: 210 nC, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 500 W.

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APT40GR120B2SCD10 Hersteller : Microsemi APT40GR120B2SCD10_A-600935.pdf IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Lieferzeit 10-14 Tag (e)
APT40GR120B2SCD10 APT40GR120B2SCD10 Hersteller : Microchip Technology microsemi_apt40gr120b2scd10_ultrafast_npt-igbt_b.pdf Trans IGBT Chip N-CH 1200V 88A 500W 3-Pin(3+Tab) TO-247 Tube
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APT40GR120B2SCD10 APT40GR120B2SCD10 Hersteller : Microsemi Corporation Description: IGBT 1200V 88A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/166ns
Switching Energy: 929µJ (on), 1070µJ (off)
Test Condition: 600V, 40A, 4.3Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
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