APT34M120J Microsemi Power Products Group
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details APT34M120J Microsemi Power Products Group
Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw, Case: ISOTOP, Drain-source voltage: 1.2kV, Drain current: 22A, On-state resistance: 290mΩ, Semiconductor structure: single transistor, Electrical mounting: screw, Mechanical mounting: screw, Polarisation: unipolar, Kind of channel: enhanced, Technology: POWER MOS 8®, Power dissipation: 960W, Pulsed drain current: 195A, Gate-source voltage: ±30V, Type of module: MOSFET transistor.
Weitere Produktangebote APT34M120J
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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APT34M120J | Hersteller : Microsemi |
 Discrete Semiconductor Modules Power MOSFET - MOS8 |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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APT34M120J | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 1.2KV 35A 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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| APT34M120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw Case: ISOTOP Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 290mΩ Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 960W Pulsed drain current: 195A Gate-source voltage: ±30V Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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| APT34M120J | Hersteller : MICROSEMI |
ISOTOP/N-Channel MOSFET APT34M120 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT34M120J | Hersteller : Microchip Technology |
Discrete Semiconductor Modules FG, MOSFET, 1200V, SOT-227 |
Produkt ist nicht verfügbar |
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| APT34M120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 22A; ISOTOP; Ugs: ±30V; screw Case: ISOTOP Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 290mΩ Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhanced Technology: POWER MOS 8® Power dissipation: 960W Pulsed drain current: 195A Gate-source voltage: ±30V Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |