APT33GF120B2RDQ2G Microchip Technology
![6240-apt33gf120b2rdq2g-apt33gf120lrdq2g-datasheet](/images/adobe-acrobat.png)
Description: IGBT NPT 1200V 64A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/185ns
Switching Energy: 1.315mJ (on), 1.515mJ (off)
Test Condition: 800V, 25A, 4.3Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 357 W
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 29.57 EUR |
100+ | 23.99 EUR |
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Technische Details APT33GF120B2RDQ2G Microchip Technology
Description: IGBT NPT 1200V 64A, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A, IGBT Type: NPT, Td (on/off) @ 25°C: 14ns/185ns, Switching Energy: 1.315mJ (on), 1.515mJ (off), Test Condition: 800V, 25A, 4.3Ohm, 15V, Gate Charge: 170 nC, Part Status: Active, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 357 W.
Weitere Produktangebote APT33GF120B2RDQ2G nach Preis ab 25.71 EUR bis 29.78 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT33GF120B2RDQ2G | Hersteller : Microchip Technology |
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auf Bestellung 136 Stücke: Lieferzeit 10-14 Tag (e) |
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APT33GF120B2RDQ2G | Hersteller : Microchip Technology |
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APT33GF120B2RDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max Type of transistor: IGBT Collector current: 30A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT33GF120B2RDQ2G | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
|||||||
![]() |
APT33GF120B2RDQ2G | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 30A; 357W; T-Max Type of transistor: IGBT Collector current: 30A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 75A Turn-on time: 31ns Turn-off time: 355ns Collector-emitter voltage: 1.2kV Power dissipation: 357W Technology: NPT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 170nC |
Produkt ist nicht verfügbar |