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APT30GT60KRG Microchip Technology
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Technische Details APT30GT60KRG Microchip Technology
Description: IGBT 600V 64A 250W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A, Supplier Device Package: TO-220 [K], IGBT Type: NPT, Td (on/off) @ 25°C: 12ns/225ns, Switching Energy: 525µJ (on), 600µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 145 nC, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 110 A, Power - Max: 250 W.
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APT30GT60KRG | Hersteller : Microsemi Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-220 [K] IGBT Type: NPT Td (on/off) @ 25°C: 12ns/225ns Switching Energy: 525µJ (on), 600µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 110 A Power - Max: 250 W |
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