Technische Details APT29F100L Microsemi
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264, Mounting: THT, Case: TO264, Pulsed drain current: 120A, Drain-source voltage: 1kV, Drain current: 19A, On-state resistance: 440mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.04kW, Polarisation: unipolar, Gate charge: 260nC, Technology: POWER MOS 8®, Kind of channel: enhanced, Gate-source voltage: ±30V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT29F100L
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APT29F100L | Hersteller : MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264 Mounting: THT Case: TO264 Pulsed drain current: 120A Drain-source voltage: 1kV Drain current: 19A On-state resistance: 440mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 260nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT29F100L | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 30A TO264 |
Produkt ist nicht verfügbar |
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APT29F100L | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 19A; Idm: 120A; 1.04kW; TO264 Mounting: THT Case: TO264 Pulsed drain current: 120A Drain-source voltage: 1kV Drain current: 19A On-state resistance: 440mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 260nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |